Full PDF Text Transcription for FLM1415-8F (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FLM1415-8F. For precise diagrams, and layout, please refer to the original PDF.
FLM1415-8F Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=39.0dBm(Typ.) •High Gain: G1dB=5.0dB(Typ.) •High PAE: ηadd=25%(Typ.) •Broad Band: 14.5 to 15.3...
View more extracted text
: G1dB=5.0dB(Typ.) •High PAE: ηadd=25%(Typ.) •Broad Band: 14.5 to 15.3GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The FLM1415-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.8 -65 to +175 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.
FLM1415-8F Datasheet
