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FLM4450-8F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM4450-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.