FLM5964-12F-001 Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B=41.5d Bm(Typ.) - High Gain: G1d B=9.0d B(Typ.) - High PAE: hadd=37%(Typ.) - Broad Band: 5.85 to 6.75GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The FLM5964-12F/001 is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 57.6 -65 to +175 +175 Unit V V W deg.C deg.C REMENDED OPERATING CONDITION Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=50 ohm RG=50 ohm -55 to +125 +155 Re m end 10 +32.0 -5.6 Unit V m A m A deg.C deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1d B G.C.P. Pow er Gain at 1d B G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IK Sym bol IDSS gm Vp V GSO P1d B G1d B Idsr η add DG IM3 Rth DTch Condition V DS=5V , V GS=0V V DS=5V , IDS=3.25A V DS=5V , IDS=250m A IGS=-250u A V DS=10V f= 5.85 to 6.75 GHz IDSDC=0.65Idss (typ.) Zs=ZL=50 ohm f=6.75 GHz Df=10MHz ，2-tone Test Pout=30.5d Bm (S.C.L.) Channel to Case 10V x Idsr x Rth S.C.L. : Single Carrier Level Min. -0.5 -5.0 40.5 8.0 -42 Lim it Typ. 5 5 -1.5 41.5 9.0 3.25 37 -45 2.3 Max. 7.5 -3.0 3.8 1.6 2.6 80 Unit A S V V d Bm d B A % d B d Bc deg.C/W deg.C G.C.P.: Gain pression Point ESD Class 3A 4000V to 8000V Note : Based on EIAJ ED-4701 C-111A (C=100p F, R=1.5kohm) Ro HS PLIANCE Yes Edition 1.1 Aug. 2012 FLM5964-12F/001 C-Band Internally Matched FET Case Style "IK" Metal-Ceramic Hermetic Package 1. Gate 2. Source (Flange) 3. Drain Unit:...