FLM5964-6F Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B = 38.5d Bm (Typ.) - High Gain: G1d B = 10.0d B (Typ.) - High PAE: hadd = 37% (Typ.) - Low IM3 = -46d Bc@Po = 27.5d Bm - Broad Band: 5.9 to 6.4GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The FLM5964-6F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.C Storage Temperature Tstg Channel Temperature Tch SEDI remends the follow ing conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (V DS ) should not exceed 10 volts. 2. The forw ard and reverse gate currents should not exceed 16.0 and -2.8 m A respectively w ith gate resistance of 100ohm. Rating 15 -5 31.2 -65 to +175 175 Unit V V W deg.C deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE ESD Note : Based on JEDEC　JESD22-A114 (C=100p F, R=1.5kohm) Symbol IDSS gm Vp VGSO P1d B G1d B Idsr hadd DG IM3 Rth DTch Test Conditions VDS=5V, V GS=0V VDS=5V, IDS=1625m A VDS=5V, IDS=125m A IGS=-125u A VDS=10V, IDS=0.65 IDSS (Typ.), f=5.9 to 6.4 GHz, ZS=ZL=50ohm f = 6.4 GHz, Df = 10 MHz 2-Tone Test Pout = 27.5d Bm S.C.L. Channel to Case 10V x Idsr x Rth IB Class 3A Yes Min. -0.5 -5.0 37.5 9.0 -44 - Limit Typ. 2500 2500 -1.5 38.5 10.0 1625 37 -46 4.0 - Max. 3750 -3.0 1900 1.2 4.8 80 Unit m A m S V V d Bm d B m A % d B d Bc deg.C/W deg.C G.C.P.: Gain pression Point, S.C.L.: Single Carrier...