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FLM6472-4F Datasheet C-band Internally Matched Fet

Manufacturer: SUMITOMO

Overview: FLM6472-4F.

Datasheet Details

Part number FLM6472-4F
Manufacturer SUMITOMO
File Size 248.83 KB
Description C-Band Internally Matched FET
Datasheet FLM6472-4F-SUMITOMO.pdf

General Description

The FLM6472-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.

Key Features

  • High Output Power: P1dB = 36.5dBm (Typ. ) High Gain: G1dB = 9.5dB (Typ. ) High PAE: ηadd = 36% (Typ. ) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET.

FLM6472-4F Distributor