SUMITOMO FLU35ZME1
The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.| Part No. | FLU35ZME1 |
|---|---|
| Datasheet | FLU35ZME1 Download |
| Manufacturer |  SUMITOMO |
| Description | L-Band Medium & High Power GaAs FET |
| Buy | Stock & Price |
FEATURES
●High Output Power: P1dB=35.5dBm(typ.)●High Gain: G1dB=11.5dB(typ.)
●Low Cost Plastic(SMT) Package
●Tape and Reel Available L-Band Medium & High Power GaAs FET
DESCRIPTION
SUMITOMO’s stringent Quality Assurance Program assures the highest reliability and consistent performance.ABSOLUTE MAXIMUM RATINGS
(Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Soutce Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 20.8 -55 to +150 150 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS < 10 Forward Gate Current IGF < 19.4 Reverse Gate Current IGR > -2.0 Gate Resistance Rg 100 Unit V mA mA ohm Channel Temperature Tch < 145 deg.CELECTRICAL CHARACTERISTICS
(Case Temperature Tc=25deg.C) Item Drain Current Trans Conductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO Test Conditions VDS=5V,VGS=0V VDS=5V,IDS=800mA VDS=5V,IDS=60mA IGS=-60mA Min. - -1.0 -5 Limit Typ.
