SUMITOMO SGC0910-200B-R
The SGC0910-200B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system.| Part No. | SGC0910-200B-R |
|---|---|
| Datasheet | SGC0910-200B-R Download |
| Manufacturer |  SUMITOMO |
| Description | X-band Internally Matched GaN-HEMT |
| Buy | Stock & Price |
FEATURES
● High Output Power: Psat=53.5dBm (Typ.)● High Gain: Gp=9.5dB (Typ.)
● High Power Added Efficiency: PAE=39% (Typ.)
● Broad Band: 9.2 to 10.5GHz
● Impedance Matched Zin/Zout = 50ohm
● Hermetically Sealed Package
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DESCRIPTION
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Rating Drain-Source Voltage VDS 55 Gate-Source Voltage VGS -15 Storage Temperature Tstg -55 to +125 Channel Temperature Tch +250 RECOMMENDED OPERATING CONDITION Item Symbol Drain-Source Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Channel Temperature Tch Output Power Po u t Condition Rg=51ohm Rg=51ohm Limit <=50 <=123.3 >=-9.0 <+200 <=P5dBELECTRICAL CHARACTERISTICS
(Case Temperature Tc=25 deg.C) Item Symbol Condition Pinch-off Voltage Frequency Range Output Power *1 Output Power *2 Power Gain *1 Power Gain *2 Drain Current Power Added Efficiency Gain Flatness Thermal Resistance VP Freq. Ps a t Ps a t GP GP IDSR PAE ΔG Rth VDS=50V, IDS=13.0mA VDS=50V-typ. IDS(DC ) =0.66A-typ.
