SGC0910-200B-R
Description
The SGC0910-200B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Rating Drain-Source Voltage VDS 55 Gate-Source Voltage VGS -15 Storage Temperature Tstg -55 to +125 Channel Temperature Tch +250 REMENDED OPERATING CONDITION Item Symbol Drain-Source Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Channel Temperature Tch Output Power Po u t Condition Rg=51ohm Rg=51ohm Limit <=50 <=123.3 >=-9.0 <+200 <=P5dB Item Symbol Condition Pinch-off Voltage Frequency Range Output Power *1 Output Power *2 Power Gain *1 Power Gain *2 Drain Current Power Added Efficiency Gain Flatness VP Freq.
Key Features
- High Output Power: Psat=53.5dBm (Typ.)
- High Gain: Gp=9.5dB (Typ.)
- High Power Added Efficiency: PAE=39% (Typ.)
- Broad Band: 9.2 to 10.5GHz
- Impedance Matched Zin/Zout = 50ohm
- Hermetically Sealed Package
