• Part: SGC0910-200B-R
  • Description: X-band Internally Matched GaN-HEMT
  • Manufacturer: SUMITOMO
  • Size: 163.29 KB
Download SGC0910-200B-R Datasheet PDF
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Datasheet Summary

X-band Internally Matched GaN-HEMT - Features - High Output Power: Psat=53.5dBm (Typ.) - High Gain: Gp=9.5dB (Typ.) - High Power Added Efficiency: PAE=39% (Typ.) - Broad Band: 9.2 to 10.5GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package - Description The SGC0910-200B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm...