SGC8598-200A-R
Key Features
- High Output Power: Psat=54.0dBm (Typ.)
- High Gain: Gp=10dB (Typ.)
- High P.A.E.: PAE=38% (Typ.)
- Broad Band: 8.5 to 9.8GHz
- Impedance Matched Zin/Zout = 50ohm
- Part: SGC8598-200A-R
- Description: X-Band Internally Matched GaN-HEMT
- Manufacturer: SUMITOMO
- Size: 365.98 KB