SGC8598-50B-R
Description
The SGC8598-50B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Rating Drain-Source Voltage VDS 55 Gate-Source Voltage VGS -15 Storage Temperature Tstg -55 to +125 Channel Temperature Tch +250 REMENDED OPERATING CONDITION Item Symbol Drain-Source Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Channel Temperature Tch Output Power Pout Condition Rg=100ohm Rg=100ohm Item Pinch-off Voltage Frequency Range Output Power at Pin=38dBm Power Gain at Pout=47dBm Drain Current at Pin=38dBm Power Added Efficiency at Pin=38dBm Gain Flatness Symbol VP Freq.
Key Features
- High Output Power: Psat=48.0dBm (Typ.)
- High Gain: Gp=11.0dB (Typ.)
- High Power Added Efficiency: PAE=41% (Typ.)
- Broad Band: 8.5 to 9.8GHz
- Impedance Matched Zin/Zout = 50ohm
- Hermetically Sealed Package
