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SGC9395-300B-R Datasheet

Manufacturer: SUMITOMO
SGC9395-300B-R datasheet preview

SGC9395-300B-R Details

Part number SGC9395-300B-R
Datasheet SGC9395-300B-R Datasheet PDF (Download)
File Size 154.52 KB
Manufacturer SUMITOMO
Description X-band Internally Matched GaN-HEMT
SGC9395-300B-R page 2 SGC9395-300B-R page 3

SGC9395-300B-R Overview

The SGC9395-300B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system. Psat Gp IDSR PAE Rth VDS=50V, IDS=20.0mA VDS=50V-typ. Duty=10% Pin=46dBm Channel to Case (Pdiss=100W,CW) Min.

SGC9395-300B-R Key Features

  • High Output Power: Psat=55.3dBm (Typ.)
  • High Gain: Gp=9.3dB (Typ.)
  • High Power Added Efficiency: PAE=38% (Typ.)
  • Frequency Band: 9.3 to 9.5GHz
  • Impedance Matched Zin/Zout = 50ohm
  • Hermetically Sealed Package
  • Description

SGC9395-300B-R Distributor

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