• Part: SGC9395-300B-R
  • Description: X-band Internally Matched GaN-HEMT
  • Manufacturer: SUMITOMO
  • Size: 154.52 KB
SGC9395-300B-R Datasheet (PDF) Download
SUMITOMO
SGC9395-300B-R

Description

The SGC9395-300B-R is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Rating Drain-Source Voltage VDS 55 Gate-Source Voltage VGS -15 Storage Temperature Tstg -55 to +125 Channel Temperature Tch +250 REMENDED OPERATING CONDITION Item Symbol Drain-Source Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Channel Temperature Tch Output Power Pout Condition Rg=10ohm Rg=10ohm Limit <=50 <=187.2 >=-13.6 <+200 <=P5dB Item Symbol Condition Pinch-off Voltage Frequency Range Output Power Power Gain Drain Current Power Added Efficiency Vp Freq.

Key Features

  • High Output Power: Psat=55.3dBm (Typ.)
  • High Gain: Gp=9.3dB (Typ.)
  • High Power Added Efficiency: PAE=38% (Typ.)
  • Frequency Band: 9.3 to 9.5GHz
  • Impedance Matched Zin/Zout = 50ohm
  • Hermetically Sealed Package