Datasheet Summary
SGK5867-100A/001
C-Band Internally Matched GaN-HEMT
Features
- High Output Power: P5dB=50.5dBm (Typ.)
- High Gain: GL=13.5dB (Typ.)
- High Power Added Efficiency: PAE=45% (Typ.)
- Broad Band: 5.85 to 6.75GHz
- Hermetically Sealed Package
DESCRIPTION The SGK5867-100A/001 is a high power GaN-HEMT that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm...