Description
The SGK5867-100A/001 is a high power GaN-HEMT that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Rating Drain-Source Voltage VDS 26 Gate-Source Voltage VGS -10 Total Power Dissipation PT 212 Storage Temperature Tstg -55 to +125 Channel Temperature Tch +250 Case Temperature Tc -40 to +125 Unit V V W deg.C deg.C deg.C REMENDED OPERATING CONDITION Item Drain-Source Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition Rg=15ohm Rg=15ohm Limit <=24 <=24.4 >=-12.8 <+192 Unit V mA mA deg.C Item Saturated Drain Current Trans Conductance Pinch-off Voltage Frequency Range Output Power at 5dB G.C.P.
Key Features
- High Output Power: P5dB=50.5dBm (Typ.)
- High Gain: GL=13.5dB (Typ.)
- High Power Added Efficiency: PAE=45% (Typ.)
- Broad Band: 5.85 to 6.75GHz
- Hermetically Sealed Package
