SGM6901VU-001
Description
The SGM6901VU/001 is a high power GaN-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Rating Drain-Source Voltage VDS Gate-Source Voltage VGS Storage Temperature Tstg Channel Temperature Tch 55 -15 -55 to +125 +250 REMENDED OPERATING CONDITION Item Symbol Condition Drain-Source Voltage VDS Forward Gate Current IGF 1st stage Rg=750ohm 2nd stage Rg=150ohm Reverse Gate Current IGR 1st stage Rg=750ohm 2nd stage Rg=150ohm Channel Temperature Tch Item Pinch-off Voltage Frequency Range Output Power Power Gain Drain Current Drain Efficiency Symbol VP (1st stage) VP (2nd stage) Freq.
Key Features
- High Output Power: Psat=45.3dBm (Typ.)
- High Gain: Gp=23.3dB (Typ.)
- Frequency Band: 9.3 to 9.5GHz
- Impedance Matched Zin/Zout = 50ohm
- Hermetically Sealed SMT Package
