SGNH130M1H
Description
Sumitomo GaN-HEMT SGNH130M1H offers high power, high efficiency, ease of matching and greater consistency for DC to 3GHz high power applications with 50V operation. Item Symbol Operating-Voltage VDS Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation Pt Storage Temperature Tstg Channel Temperature Tch Condition VGS=-8V Tc=25deg.C Rating 55 200 -15 150 -55 to +125 250 Unit V V V W deg.C deg.C REMENDED OPERATING CONDITION(Case Temperature Tc= 25deg.C) Item Symbol Condition Limit Unit DC Input Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Channel Temperature Tch RG=5 ohm RG=5 ohm 50 <125.0 >-7.2 < 180 V mA mA deg.C Item Symbol Condition Limit min.
Key Features
- High Power GaN HEMT for DC to 3GHz
- High Power : 130W @ 2.45GHz
- High Efficiency: 59% @ 2.45GHz
- Easy of Matching: Input Pre-matched for 3GHz
- Small Flangeless Package DC to 3GHz High Power GaN-HEMT
