SGNH130M1H Overview
Sumitomo GaN-HEMT SGNH130M1H offers high power, high efficiency, ease of matching and greater consistency for DC to 3GHz high power applications with 50V operation. -4.0 V - dBm - % - dB - dBm - % - dB 1.32 deg.C/W Edition 1.1 Mar. 2016 1 RF characteristics @f=3GHz, Pulse Output Power and Drain Efficiency vs.
SGNH130M1H Key Features
- High Power GaN HEMT for DC to 3GHz
- High Power : 130W @ 2.45GHz
- High Efficiency: 59% @ 2.45GHz
- CW Operable
- Easy of Matching: Input Pre-matched for 3GHz
- Small Flangeless Package