Description
Sumitomo GaN-HEMT Pallet Amplifier SMC2933L6012R offers high power, high efficiency, ease of matching and greater consistency covering 2.9 to 3.3GHz for S-band pulsed applications with 50V operation and pulse condition of up to 300usec pulse width and duty of up to 10%. Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V Drain-Source Voltage VDS VGS=-8V 100 V Gate-Source Voltage VGS -15 V Storage Temperature Tstg -40 to +85 deg.C Channel Temperature Tch 250 deg.C REMENDED OPERATING CONDITION (Case Temperature Tc= 25deg.C) Item Symbol Condition Limit Unit Pulse Width PW Duty Cycle d DC Input Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Channel Temperature Tch 200 10 50 <816 >-31.2 180 usec % V mA mA deg.C Sumitomo remends that the use of a reflective harmonic rejection filter at the device output be avoided.
Key Features
- High Voltage Operation : VDS=50V
- High Power : 700W (typ.) @ Pin=31.6W (45dBm)
- High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm)
- Power Gain : 13.5dB(typ.)
- Impedance Matched Zin/Zout = 50 ohm High Voltage
- High Power GaN-HEMT Pallet Amplifier