BJT200D
BJT200D is Silicon NPN Power Switching Transistor manufactured by SY semiconductors.
FEATURES
▲HIGH VOLTAGE CAPABILTY ▲HIGH SPEED SWITCHING
▲WIDE SOA ▲Ro HS PL APPLICATION ▲FLUORESCENT LAMP ▲ELECTRONIC TRANSFORMER
▲ELECTONIC TRANSFORMER ▲SWICH MODE POWER SUPPLY
- 最大额定值 Absolute Maximum Ratings (Tc=25℃)
参数 PARAMETER
符号
SYMBO L
额定值 VALUE
集电极-基极电压 Collector- Base Voltage
VCBO
集电极-发射极电压 Collector- Emitter Voltage
V CEO
发射极-基极电压 Emitter-Base Voltage
V EBO
集电极电流 Collector Current
集电极耗散功率 Total Power Dissipation @TC=25℃
P DTOT
最高工作温度 Junction Temperature
贮存温度 Storage Temperature
TSTG -55-150
单位 UNIT
℃ ℃
- 电特性 Electronic Characteristics (Tc=25℃)
参数名称
符号
测试条件
CHARACTERISTICS
SYMBOL TEST CONDITION
集电极-基极截至电流 Collector- Base Cutoff Current
集电极-发射极截至电流 Collector-Emitter Cutoff Current
发射极-基极截至电流 Emitter- Base Cutoff Current
集电极-基极打压 Collector- Base...
