SPN2318 Overview
The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPN2318 Key Features
- 40V/3.9A,RDS(ON)=56mΩ@VGS=10V
- 40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V
- 40V/2.0A,RDS(ON)=95mΩ@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
SPN2318 Applications
- Power Management in Note book
