SPN3446 - N-Channel MOSFET

SYNC POWER

General Description

The SPN3446 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V.
20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23-6L package design PIN.

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SPN3446 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN3446
Manufacturer	SYNC POWER
File Size	503.80 KB
Description	N-Channel MOSFET
Datasheet	SPN3446 Datasheet

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Full PDF Text Transcription (Reference)

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SPN3446 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3446 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V  20V/5.0A,RDS(ON)=38mΩ@VGS=2.