SPN8080 - N-Channel MOSFET

SYNC POWER

General Description

The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design.

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SPN8080 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN8080
Manufacturer	SYNC POWER
File Size	272.26 KB
Description	N-Channel MOSFET
Datasheet	SPN8080 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN8080 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifier z PIN CONFIGURATION( TO-220-3L ) www.