Datasheet Summary
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features
80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS z DC/DC...