SDG8204 - Dual N-Channel E nhancement Mode F ield E ffect Transistor

SamHop Microelectronics Corp.

Datasheet Details

Part number	SDG8204
Manufacturer	SamHop Microelectronics Corp.
File Size	368.96 KB
Description	Dual N-Channel E nhancement Mode F ield E ffect Transistor
Datasheet	SDG8204 Datasheet
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S DG 8204 S amHop Microelectronics C orp. December , 2002 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 28 @ V G S = 4.0V 34 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 8 6.0 35 1.7 1.

Published: May 18, 2005 |