SDM4952 Datasheet | SamHop Microelectronics Corp.

S DM4952 S am Hop Microelectronics C orp. March , 2003 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX -5.3A R DS (ON) S uper high dense cell design for low R DS (ON ). 50 @ V G S = -4.5V 75 @ V G S = -2.7V R ugged and reliable. S urface Mount P ackage. D1 D1 D2 D2 S O-8 1 1 2 3 4 S1 G1 S2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 12 5.3 21 2.5 2 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W S DM4952 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) g FS C IS S C OS S CRSS c S ymbol Condition...