SDB55N02 Overview
S DP /B 55N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S Max ID 32A R DS (on) ( m W ) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability.