SDB60N03L
SDB60N03L is N-Channel Logic Level E nhancement Mode Field E ffect Transistor manufactured by SamHop Microelectronics.
S DP /B 60N03L
S am Hop Microelectronics C orp. May,2004 ver1.1
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package.
56A
R DS (on) ( m W ) Max
11 @ V G S = 10V 19 @ V G S = 4.5V
S DP S E R IE S TO-220
S DB S E R IE S TO-263(DD-P AK)
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 30 20 56 168 60 75 -65 to 175
Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA
2.5 62.5
C /W C /W
S DP /B 60N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) g FS C IS S C OS S CRSS b
Condition
V GS = 0V, ID = 250u A V DS = 24V, V GS =0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250u A V GS = 10V, ID = 30A V GS = 4.5V, ID = 24A V GS = 10V, V DS = 10V V DS = 10V, ID = 26A
Min Typ Max Unit
30 10
V u A n A...
