SamHop Microelectronics SDD02N25
N-Channel MOSFET
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 2A R DS(ON) ( Ω) Typ 3.2 @ VGS=10V G S G D S SDU SERIES TO - 252AA(D-PAK) SDD SERIES TO - 251(I-PAK)ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 250 ±30 TA=25°C TA=70°C 2 1.5 6 10.4 TA=25°C TA=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Jun,07,2012 1 SDU/D02N25 Ver 1.1ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=200V , VGS=0V Min 250 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown...