SamHop Microelectronics SDD20N03L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. D G S SDU SERIES TO-252AA(D-PAK) GDS SDD SERIES TO-251(l-PAK) D G SABSOLUTE MAXIMUM RATINGS
(TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C -Pulsed a Drain-Source Diode Forward Current Symbol VDS VGS ID IDM IS Limit 30 20 35 87 20 Unit V V A A A Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient PD TJ, TSTG R JC R JA 50 -55 to 175 3 50 W C C /W C /W 1 S DU/D20N03L E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) P a ra meter S ymbol C ondition Min