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SDP02N20 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G SDP SERIES TO-220 SDF SERIES TO-220F S.

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Datasheet Details

Part number SDP02N20
Manufacturer SamHop Microelectronics
File Size 209.58 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SDP02N20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SDP02N20 SDF02N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 2A R DS(ON) ( Ω) Typ 3.0 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G SDP SERIES TO-220 SDF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c a SDP02N20 SDF02N20 200 ±30 ±30 TC=25°C TC=100°C 2 1.4 5.9 81 TC=25°C TC=100°C 75 37.5 25 12.5 2 1.4 5.