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Green Product
SDT02N02
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
200V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
2A
R DS(ON) ( Ω) Typ
2.5 @ VGS=10V
R ugged and reliable. S urface Mount P ackage.
D
G G S S
SOT-223
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a a
Limit 200 ±30 TA=25°C TA=25°C 2 13 2.98 -55 to 175
Units V V A A W °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
42
°C/W
Details are subject to change without notice.
SDT02N02 Datasheet
