SamHop Microelectronics SDT02N02
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a a Limit 200 ±30 TA=25°C TA=25°C 2 13 2.98 -55 to 175 Units V V A A W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 42 °C/W Details are subject to change without notice. Jun,07,2012 1 SDT02N02 Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=160V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b 200 1 ±100 uA nA VGS= ±30V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 3 2.5 1.8 4 3.1 V ohm S DYNAMIC...