SamHop Microelectronics SP07N65
N-Channel MOSFET
| Part No. | SP07N65 |
|---|---|
| Datasheet | SP07N65 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. PIN 1 56 78 DFN 5x6 12 34ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TA=25°C TA=70°C IDM -Pulsed c PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 650 ±20 1 0.8 3.5 3.1 2 -55 to 150 40 Units V V A A A W W °C °C/W Details are subject to change without notice. 1 May,26,2014 SP07N65 Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS b CISS...
