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Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2030
Ver 2.1
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
5.5 @ VGS=4.5V 6.5 @ VGS=3.9V 46A 7.0 @ VGS=3.1V 7.5 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D1/D2
DFN 3X3
PIN 1
G1 G2 S1 S2
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
Limit 20 ±12 46 36.8 96 15.6 10.
SP2030 Datasheet
