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SP2110 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2.

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Datasheet Details

Part number SP2110
Manufacturer SamHop Microelectronics
File Size 100.82 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP2110 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product SP2110 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 1.6A R DS(ON) (m Ω) Max 390 @ VGS=10V 460 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c ac TA=25°C TA=70°C TA=25°C TA=70°C Limit 100 ±20 1.6 1.28 7 2.5 1.