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Green Product
SP2458
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
10.5 @ VGS=4.5V 11.0 @ VGS=4.0V 24V 9A 11.5 @ VGS=3.7V 13.0 @ VGS=3.1V 17.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
DF N 2X5
G2
S2
S2
Bottom Drain Contact
D1/D2
G1 S1
3 2 1
4 G2 5 6 S2 S2
G1 S1 S1
S1
(Bottom view)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 24 ±10 9 7.2 43 1.67 1.
SP2458 Datasheet
