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Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP4400
Ver 1.0
PRODUCT SUMMARY (DIE 1)
VDSS
ID
RDS(ON) (mΩ) Max
40V
28A
23 @ VGS=10V 34 @ VGS=4.5V
PRODUCT SUMMARY (DIE 2)
VDSS
ID
RDS(ON) (mΩ) Max
40V
66A
10 @ VGS=10V 15 @ VGS=4.5V
G2 S2 S2 S2
S1/D2
PDFN 5x6
G1 D1 D1 D1
S2 5 S2 6 S2 7 G2 8
S1/D2
4 D1 3 D1 2 D1 1 G1
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=70°C
IDM
-Pulsed a c
EAS
Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Die 1
Die 2
40
±20
28
66
22.4
52.