SP4510DG - N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics

Key Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. 87 65 DFN 5x6 PIN1 12 34.

SP4510DG n-channel logic level enhancement mode field effect transistor by SamHop Microelectronics - Datasheet Preview

Datasheet Details

Part number	SP4510DG
Manufacturer	SamHop Microelectronics
File Size	91.81 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	SP4510DG Datasheet

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SP4510DGGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 48A 19 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. 87 65 DFN 5x6 PIN1 12 34 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C 100 ±20 48 38.4 IDM -Pulsed a c 98 EAS Single Pulse Avalanche Energy d 132 TC=25°C PD Maximum Power Dissipation TC=70°C 83 53 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 1.