SamHop Microelectronics SP4510DG
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. 87 65 DFN 5x6 PIN1 12 34ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C 100 ±20 48 38.4 IDM -Pulsed a c 98 EAS Single Pulse Avalanche Energy d 132 TC=25°C PD Maximum Power Dissipation TC=70°C 83 53 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case 1.5 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Dec,08,2016 SP4510DG Ver 1.0ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise noted) 4 Symbol