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SP632S - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. PIN 1 5 6 7 8 DFN 5x6 1 2 3 4.

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Datasheet Details

Part number SP632S
Manufacturer SamHop Microelectronics
File Size 95.19 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP632S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SP632S Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 10A R DS(ON) (m Ω) Max 16 @ VGS=10V 24 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. PIN 1 5 6 7 8 DFN 5x6 1 2 3 4 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C ID Drain Current-Continuous ad Limit 60 ±20 42 26 10 8 35 c Units V V A A A A A mJ W W W °C TC=100°C TA=25°C TA=70°C IDM EAS PD -Pulsed d Single Pulse Avalanche Energy Maximum Power Dissipation a 156 TC=25°C TA=25°C TA=70°C 54 3.