SamHop Microelectronics SP6719
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 5x6 PIN1 87 65 12 34ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 60 ±20 11 8.8 39 256 3.1 2 -55 to 150 40 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Jan,15,2015 SP6719 Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Sym