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SP6719Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
12.5 @ VGS=10V 60V 11A
19.0 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
DFN 5x6
PIN1
87 65 12 34
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TA=25°C TA=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 60 ±20 11 8.8 39 256 3.
SP6719 Datasheet
