SamHop Microelectronics SP8010E
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | SP8010E |
|---|---|
| Datasheet | SP8010E Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c a a c Limit 24 ±20 Units V V A A W °C TA=25°C TA=25°C 26 78 1.67 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Mar,24,2014 1 SP8010E Ver 1.2ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 24 10 10 ±10 Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=10mA VGS=-12V , ID=10mA VDS=24V , VGS=0V V V uA uA VGS= ±20V , VDS=0V ON CHARACT...
