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SP8075E - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8.

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Datasheet Details

Part number SP8075E
Manufacturer SamHop Microelectronics
File Size 100.19 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8075E Datasheet

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Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SP8075E Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 3.0 @ VGS=10V 30V 30A 3.8 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C IDM -Pulsed a c PD Maximum Power Dissipation TA=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 4G 3S 2S 1S Limit 30 ±20 30 90 1.