SamHop Microelectronics SP8075E
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | SP8075E |
|---|---|
| Datasheet | SP8075E Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C IDM -Pulsed a c PD Maximum Power Dissipation TA=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 4G 3S 2S 1S Limit 30 ±20 30 90 1.67 -55 to 150 75 Units V V A A W °C °C/W Details are subject to change without notice. 1 Jul,02,2015 SP8075E Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS
