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SP8651 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S mini 8 P IN 1 D1.

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Datasheet Details

Part number SP8651
Manufacturer SamHop Microelectronics
File Size 93.88 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8651 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SP8651 Ver 3.7 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.0 @ VGS=4.5V 15.0 @ VGS=4.0V 24V 10A 16.0 @ VGS=3.7V 17.5 @ VGS=3.1V 21.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S mini 8 P IN 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed d c ad Limit 24 ±12 TA=25°C TA=70°C 10 8 60 56 TA=25°C TA=70°C 1.32 0.