SamHop Microelectronics STA6620
Dual N-Channel Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 7A V GS =4.5V, ID= 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 7A Min Typ C Max Unit 40 1 10 1 2 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 3 25 42 19 28 15 13 710 110 68 16.5 14 40 6.5 V DS =20V, ID =7A,V GS =10V V DS =20V, ID =7A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =20V, ID = 7 A V GS =4.5V 2 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =25V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Ti...