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STB10N03 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S.

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Datasheet Details

Part number STB10N03
Manufacturer SamHop Microelectronics
File Size 99.34 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STB10N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB10N03Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 120A 4.0 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-263 package.