SamHop Microelectronics STB28N15
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STB28N15 |
|---|---|
| Datasheet | STB28N15 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK )ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=100°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 150 ±20 32 22.6 94 216 136 -55 to 175 1.1 55 Units V V A A A mJ W °C °C/W °C/W Details are subject to change without notice. 1 Apr,08,2016 STB28N15 Ver 1.0 ELECTRICAL C
