Datasheet4U Logo Datasheet4U.com

STB31L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK).

📥 Download Datasheet

Datasheet Details

Part number STB31L01
Manufacturer SamHop Microelectronics
File Size 131.10 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STB31L01 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB31N65M5 N-Channel Power MOSFET STMicroelectronics
STB31N65M5 N-Channel MOSFET INCHANGE
STB300NH02L N-CHANNEL Power MOSFET ST Microelectronics
STB30120C SCHOTTKY RECTIFIER SMC Diode
STB30150C SCHOTTKY RECTIFIER SMC Diode

Other Datasheets by SamHop Microelectronics

Part Number Description
STB1082 N-Channel Enhancement Mode Field Effect Transistor
STB10N03 N-Channel Enhancement Mode Field Effect Transistor
STB28N15 N-Channel Enhancement Mode Field Effect Transistor
STB432S N-Channel Logic Enhancement Mode Field Effect Transistor
STB434S N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Gre r Pro STB31L01 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 100 ±20 TC=25°C TC=70°C 26 21.8 76 36 TC=25°C TC=70°C 75 52.