SamHop Microelectronics STB438S
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STB438S |
|---|---|
| Datasheet | STB438S Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 40 ±20 ID Drain Current-Continuous a TA=25°C TA=70°C 60 50 IDM -Pulsed b EAS Avalanche Energy c 240 196 PD Maximum Power Dissipation a TA=25°C TA=70°C 70 45 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 50 Units V V A A A mJ W W °C °C/W °C/W Feb,05,2009 1 STB/P43
