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STB440S Datasheet PDF

SamHop Microelectronics STB440S

N-Channel MOSFET

Part No. STB440S
Datasheet STB440S Download
Manufacturer
SamHop Microelectronics
Description N-Channel MOSFET
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STB440S datasheet page 1 preview

FEATURES

Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 65A R DS(ON) (m Ω) Max 8 @ VGS=10V 11.5 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG

MAXIMUM RATINGS

( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation a b a Limit 40 ±20 65 52 191 196 Units V V A A A mJ W W °C TA=25 °C TA=70 °C TA=25 °C TA=70 °C 62.5 40 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 50 °C/W °C/W Apr,13,2009 1 Downloaded from Elcodis.com electronic components distributor STB/P440S Ver 1.0

ELECTRICAL CHARACTERISTICS

( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min...
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