STB520N
STB520N is N-Channel Enhancement Mode Field Effect Transistor manufactured by SamHop Microelectronics.
EATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package.
GS S TB S E R IE S T O -263(DD-P AK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current-Continuous c
TC=25°C TC=70°C
200 ±20 22 18.4
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
TC=25°C PD Maximum Power Dissipation
TC=70°C
75 52.5
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
2 62.5
Units V V A A A m J W W
°C
°C/W °C/W
Details are subject to change without notice.
Jul,07,2016
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