SamHop Microelectronics STB520N
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STB520N |
|---|---|
| Datasheet | STB520N Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G SABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C 200 ±20 22 18.4 IDM -Pulsed a c 64 EAS Single Pulse Avalanche Energy d 110 TC=25°C PD Maximum Power Dissipation TC=70°C 75 52.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Jul,07,2016 STB520N Ver 1.0 ELE
