Datasheet4U Logo Datasheet4U.com

STD06L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ).

📥 Download Datasheet

Datasheet Details

Part number STD06L01
Manufacturer SamHop Microelectronics
File Size 146.19 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD06L01 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD01N Darlington Transistors Sanken electric
STD01P Darlington Transistors Sanken electric
STD02N Darlington Transistors Sanken electric
STD02P Darlington Transistors Sanken electric
STD03205 DC Solid State Relay celduc-relais

Other Datasheets by SamHop Microelectronics

Part Number Description
STD03L01 N-Channel Logic Level Enhancement Mode Field Effect Transistor
STD03L07 N-Channel Logic Level Enhancement Mode Field Effect Transistor
STD03N20 N-Channel MOSFET
STD04N20 N-Channel MOSFET
STD09N25 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Green Product STU06L01 STD06L01 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 6A R DS(ON) (m Ω) Max 353 @ VGS=10V 553 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 100 ±20 TC=25°C TC=70°C 6 4.8 17 3.