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STD435S - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ).

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Datasheet Details

Part number STD435S
Manufacturer SamHop Microelectronics
File Size 105.99 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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Gr Pr STU/D435S Ver 1.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -38A R DS(ON) (m Ω) Max 17.5 @ VGS=10V 27 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range a Limit -40 ±20 Units V V A A A mJ W W °C TC=25°C TC=70°C c -38 -30.
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