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STD600S - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • ( m W ) Max ID 16A RDS(ON) Super high dense cell design for low RDS(ON). 55 @ VGS = 10V 70 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S.

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Datasheet Details

Part number STD600S
Manufacturer SamHop Microelectronics
File Size 742.51 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD600S Datasheet

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Green Product SamHop Microelectronics Corp. STU/D600S Aug 25,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V FEATURES ( m W ) Max ID 16A RDS(ON) Super high dense cell design for low RDS(ON). 55 @ VGS = 10V 70 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM a Limit 60 20 16 10.