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STD9916L - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S.

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Datasheet Details

Part number STD9916L
Manufacturer SamHop Microelectronics
File Size 860.67 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD9916L Datasheet

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Full PDF Text Transcription (Reference)

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STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS www.DataSheet4U.com 30V FEATURES ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package.