SamHop Microelectronics STE336S
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STE336S |
|---|---|
| Datasheet | STE336S Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. 5 6 7 8 PIN 1 1 2 3 4 Power Pak 5 x 6ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 22 18.4 77 3.8 2.6 -55 to 175 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 40 °C/W Details are subject to change without notice. Jan,31,2013 1 STE336S Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(t...
