SamHop Microelectronics STF1016C
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 3.3 X 3.3 PIN 1 G S S S (Bottom view) DD D D D5 D6 D7 D8 4G 3S 2S 1SABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage d Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=100°C TA=25°C EAS Single Pulse Avalanche Energy e PD Maximum Power Dissipation TC=25°C TA=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Limit 100 ±20 40 25.3 8 160 196 62.5 1.92 -55 to 150 65 2 Units V V A A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 J